dp0150alp4 / dp0150blp4 document number: ds31493 rev. 4 - 2 1 of 5 www.diodes.com january 2011 ? diodes incorporated dp0150alp4 / dp0150blp4 new product 50v pnp small signal su rface mount transistor features ? epitaxial die construction ? ultra-small leadless surface mount package ? ultra-low profile (0.40mm max) ? complementary npn type available (dn0150alp4 / dn0150blp4) ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free, "green" device (note 2) ? qualified to aec-q101standards for high reliability mechanical data ? case: dfn1006h4-3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0008 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DP0150ALP4-7 t5 7 8 3,000 DP0150ALP4-7b t5 7 8 10,000 dp0150blp4-7 t6 7 8 3,000 dp0150blp4-7b t6 7 8 10,000 notes: 1. no purposefully added lead. 2. diodes inc's "green" policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com. marking information bottom view top view device schematic dfn1006h4-3 device symbol c e b tx = product type marking code t5 = dp0150alp4 t6 = dp0150blp4 c e b tx tx DP0150ALP4-7 dp0150blp4-7 DP0150ALP4-7b dp0150blp4-7b top view bar denotes base and emitter side top view dot denotes collector side
dp0150alp4 / dp0150blp4 document number: ds31493 rev. 4 - 2 2 of 5 www.diodes.com january 2011 ? diodes incorporated dp0150alp4 / dp0150blp4 new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current - continuous i c -100 ma peak pulse collector current i cm -200 ma base current i b -30 ma thermal characteristics characteristic symbol value unit power dissipation (note 4) p d 450 mw thermal resistance, junction to ambient (note 4) r ja 278 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage v( br ) cbo -50 ? ? v i c = -10 a, i e = 0 collector-emitter breakdown voltage (note 5) v( br ) ceo -50 ? ? v i c = -1ma, i b = 0 emitter-base breakdown voltage v( br ) ebo -5 ? ? v i e = -10 a, i c = 0 collector cut-off current i cbo ? ? -0.1 a v cb = -50v, i e = 0 emitter cut-off current i ebo ? ? -0.1 a v eb = -5v, i c = 0 on characteristics (note 5) collector-emitter saturation voltage v ce ( sat ) ? -0.15 -0.3 v i c = -100ma, i b = -10ma dc current gain dp01510alp4 dp01510blp4 h fe 120 ? 240 ? v ce = -6v, i c = -2ma 200 ? 400 small signal characteristics transition frequency f t 80 ? ? mhz v ce = -10v, i e = 1ma f = 30mhz output capactiance c ob ? 1.6 ? pf v cb = -10v, i e = 0, f = 1mhz notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout. 5. measured under pulsed conditions. pulse width = 300s. duty cycle 2%
dp0150alp4 / dp0150blp4 document number: ds31493 rev. 4 - 2 3 of 5 www.diodes.com january 2011 ? diodes incorporated dp0150alp4 / dp0150blp4 new product 0 0 p , power dissipation (w) d t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature (note 3) 100 200 300 400 500 25 50 75 100 125 150 600 r = 278c/w ja 01 2 345 -v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage (dn0150blp4) 0 0.10 -i , c o lle c t o r c u r r en t (a) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 0.05 0.15 0.20 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 3 typical dc current gain vs. collector current (dn0150blp4) 10 100 1,000 h, d c c u r r e n t g ai n fe t = 150c a t = 25c a t = -55c a t = 85c a v = -6v ce 0.0001 0.001 0.01 0.1 1 -i , collector current (a) c fig. 4 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 -v , c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) i/i = 10 cb t = 85c a t = 25c a t = -55c a t = 150c a -i , collector current (a) c fig. 5 typical base-emitter turn-on voltage vs. collector current 0.0001 0.001 0.01 0.1 1 -v , base-emi t t e r t u r n - o n v o l t a g e (v) be(on) 0.2 0.4 0.6 0.8 1.0 1.2 0 t = 150c a t = 25c a t = -55c a t = 85c a v = -6v ce -i , collector current (a) c fig. 6 typical base-emitter saturation voltage vs. collector current 0.0001 0.001 0.01 0.1 1 -v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) 0.2 0.4 0.6 0.8 1.0 1.2 t = 150c a t = 25c a t = -55c a t = 85c a i = 10 cb /i
dp0150alp4 / dp0150blp4 document number: ds31493 rev. 4 - 2 4 of 5 www.diodes.com january 2011 ? diodes incorporated dp0150alp4 / dp0150blp4 new product 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics 0 1 10 100 c a p a c i t a n c e (p f ) c ibo c obo f = 1mhz 0 50 100 150 200 250 02 4 6 810 -i , collector current (ma) c fig. 8 typical gain-bandwidth product vs. collector current f, g ain-bandwid t h p r o d u c t (m h z) t v = -6v f = 30mhz ce package outline dimensions suggested pad layout dfn1006h4-3 dim min max typ a 0.95 1.075 1.00 b 0.55 0.675 0.60 c 0.45 0.55 0.50 d 0.20 0.30 0.25 g ? 0.40 ? h 0 0.05 0.02 k 0.10 0.20 0.15 l 0.20 0.30 0.25 m ? ? 0.35 n ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 d h b c ln a m k g y c g1 g2 x x 1 z
dp0150alp4 / dp0150blp4 document number: ds31493 rev. 4 - 2 5 of 5 www.diodes.com january 2011 ? diodes incorporated dp0150alp4 / dp0150blp4 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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